US Patent 11171148 Isolation structures for integrated circuit devices

Integrated circuits, and integrated circuit devices, might include a semiconductor, a first active area in the semiconductor, a second active area in the semiconductor, and an isolation structure in the semiconductor between the first active area and the second active area. The isolation structure might include a first edge portion extending below a surface of the semiconductor to a first depth, a second edge portion extending below the surface of the semiconductor to the first depth, and an interior portion between the first edge portion and the second edge portion, and extending below the surface of the semiconductor to a second depth, less than the first depth.