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US Patent 11128261 Constant Vds1 bias control for stacked transistor configuration

Patent 11128261 was granted and assigned to pSemi on September, 2021 by the United States Patent and Trademark Office.

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Applicant
pSemi
pSemi
1
Current Assignee
pSemi
pSemi
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
111282611
Patent Inventor Names
Christopher C. Murphy1
Jeffrey A. Dykstra1
Tero Tapio Ranta1
Date of Patent
September 21, 2021
1
Patent Application Number
201901311
Date Filed
January 31, 2019
1
Patent Citations Received
‌
US Patent 12126305 Radio frequency (RF) equalizer in an envelope tracking (ET) circuit
2
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US Patent 11909385 Fast-switching power management circuit and related apparatus
3
‌
US Patent 11936416 Biasing of cascode power amplifiers for multiple power supply domains
4
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US Patent 12063018 Envelope tracking integrated circuit operable with multiple types of power amplifiers
5
‌
US Patent 12068720 Barely Doherty dual envelope tracking (BD2E) circuit
6
‌
US Patent 12081173 Complementary envelope detector
7
‌
US Patent 11196333 Dual-modulation power management circuit
1
‌
US Patent 11196392 Device and device protection system
...
Patent abstract

Various methods and circuital arrangements for biasing one or more gates of stacked transistors of an amplifier are presented, where the amplifier can have a varying supply voltage. According to one aspect, the gate of the input transistor of the amplifier is biased with a fixed voltage whereas the gates of the other transistors of the amplifier are biased with variable voltages that are linear functions of the varying supply voltage. According to another aspect, the linear functions are such that the variable voltages coincide with the fixed voltage at a value of the varying supply voltage for which the input transistor is at the edge of triode. According to another aspect, biasing of the stacked transistors is such that, while the supply voltage varies, the drain-to-source voltage of the input transistor is maintained to a fixed value whereas the drain-to-source voltages of all other transistors are equal to one another.

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