US Patent 11121216 III-nitride devices including a graded depleting layer

Patent 11121216 was granted and assigned to Transphorm on September, 2021 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Patent Applicant

Transphorm

Current Assignee

Transphorm

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11121216

Date of Patent

September 14, 2021

Patent Application Number

20200309

Date Filed

March 9, 2020

Patent abstract

A III-N device includes a III-N layer structure including a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer over the III-N barrier layer having a first side adjacent to the III-N barrier layer and a second side opposite the first side; a first power electrode and a second power electrode; and a gate between the first and second power electrodes, the gate being over the III-N layer structure. A composition of the graded III-N layer is graded so the bandgap of the graded III-N layer adjacent to the first side is greater than the bandgap of the graded III-N layer adjacent to the second side. A region of the graded III-N layer is (i) between the gate and the second power electrode, and (ii) electrically connected to the first power electrode and electrically isolated from the second power electrode.