US Patent 11121169 Metal vertical transfer gate with high-k dielectric passivation lining
Patent 11121169 was granted and assigned to Omnivision Technologies, Inc. on September, 2021 by the United States Patent and Trademark Office.
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A method for manufacturing an image sensor includes, for each of a plurality of photosensitive pixels of the image sensor, forming a trench in a semiconductor substrate of the image sensor, and depositing temporary transfer gate material in and above the trench. The method further includes, after the step of depositing temporary transfer gate material, high-temperature annealing at least a portion of the semiconductor substrate. In addition, the method includes, after the step of high-temperature annealing, (a) removing the temporary transfer gate material, thereby reopening the trench, (b) depositing a passivation lining, having a high-k dielectric, in the reopened trench, and (c) depositing metal on the high-k dielectric passivation lining to form a metal vertical transfer gate in the trench and extending above the trench.
US Patent 11121169 Metal vertical transfer gate with high-k dielectric passivation lining
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