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US Patent 11062955 Vertical transistors having uniform channel length

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 26, 2019
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Date of Patent
July 13, 2021
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Patent Application Number
16364651
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Patent Citations
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US Patent 10141448 Vertical FETs with different gate lengths and spacer thicknesses
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US Patent 10090303 Fabrication of vertical field effect transistors with uniform structural profiles
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US Patent 10170590 Vertical field effect transistors with uniform threshold voltage
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US Patent 10037919 Integrated single-gated vertical field effect transistor (VFET) and independent double-gated VFET
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US Patent 10084055 Uniform threshold voltage for nanosheet devices
Patent Inventor Names
Takashi Ando
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Choonghyun Lee
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Jingyun Zhang
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Pouya Hashemi
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Alexander Reznicek
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11062955
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Patent Primary Examiner
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Ratisha Mehta
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