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US Patent 11004881 Global shutter image sensor

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
110048810
Patent Inventor Names
Xinqiao Liu0
Song Chen0
Date of Patent
May 11, 2021
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Patent Application Number
163697630
Date Filed
March 29, 2019
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Patent Citations
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US Patent 10015416 Imaging systems with high dynamic range and phase detection pixels
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US Patent 10419701 Digital pixel image sensor
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US Patent 10574925 Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus
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US Patent 10598546 Detecting high intensity light in photo sensor
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US Patent 10686996 Digital pixel with extended dynamic range
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US Patent 10608101 Detection circuit for photo sensor with stacked substrates
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US Patent 10812742 Apparatus and method for determining whether a photodiode saturates and outputting a digital value representing a charge from that photodiode based on that determination
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US Patent 10804926 Charge leakage compensation in analog-to-digital converter
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Patent Citations Received
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US Patent 11463636 Pixel sensor having multiple photodiodes
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US Patent 11943561 Non-linear quantization at pixel sensor
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US Patent 11956560 Digital pixel sensor having reduced quantization operation
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US Patent 11956413 Pixel sensor having multiple photodiodes and shared comparator
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US Patent 11974044 Pixel sensor having adaptive exposure time
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US Patent 12022218 Digital image sensor using a single-input comparator based quantizer
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US Patent 11595598 Global shutter image sensor
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US Patent 11595602 Image sensor post processing
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Patent Primary Examiner
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Shahed Ahmed
0
Patent abstract

Examples of image sensors are provided. In one example, a pixel cell comprises a first semiconductor die, a sampling capacitor, and a second semiconductor die which may include the sampling capacitor. The first semiconductor die includes a photodiode and a charge sensing device. The second semiconductor die forms a stack with the first semiconductor die, the second semiconductor die including an interface circuit coupled with the photodiode, the charge sensing device, and the sampling capacitor. The interface circuit is configured to: enable the photodiode to accumulate charge responsive to incident light within a integration period; transfer the charge from the photodiode to the charge sensing device; perform, using the sampling capacitor, a sample-and-hold operation to convert the charge in the charge sensing device into a voltage; and generate a digital output based on the voltage to represent an intensity of the incident light received by the photodiode.

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