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US Patent 10998044 RRAM write using a ramp control circuit

Patent 10998044 was granted and assigned to Hefei Reliance Memory Ltd. on May, 2021 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 11963465 Non-volatile memory structure with positioned doping
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Patent abstract

An RRAM array has one or more source lines and one or more bitlines. A control circuit sets an RRAM cell to a low resistance state in a set operation, and resets the RRAM cell to a high resistance state in a reset operation. A voltage applied to a bitline or source line is ramped during a first time interval, held to a maximum voltage value during a second interval, and ceased after the second time interval.

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Patent Inventor Names
Brent Haukness0
Zhichao Lu0
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=109980440
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edited on 17 May, 2023
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Patent Citations Received
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US Patent 11653580 Non-volatile memory structure with positioned doping
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Edits on 26 Sep, 2022
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Infobox
Is a
Patent
Patent
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Patent Applicant
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Hefei Reliance Memory Ltd.
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Current Assignee
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Hefei Reliance Memory Ltd.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
109980440
Date of Patent
May 4, 2021
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Patent Application Number
164627210
Date Filed
December 19, 2017
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=109980440
Patent Primary Examiner
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Jerome Leboeuf
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Edits on 6 Jun, 2022
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10998044
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 US Patent 10998044 RRAM write using a ramp control circuit

Infobox
Is a
Patent
Patent
Patent applicant
‌
Hefei Reliance Memory Ltd.
Current assignee
‌
Hefei Reliance Memory Ltd.
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10998044
Date of patent
May 4, 2021
Patent application number
16462721
Date Filed
December 19, 2017
Patent primary examiner
‌
Jerome Leboeuf

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