US Patent 10892007 Variable delay word line enable

Patent 10892007 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2021 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Patent Applicant

Taiwan Semiconductor Manufacturing Company

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

10892007

Date of Patent

January 12, 2021

Patent Application Number

16171909

Date Filed

October 26, 2018

Patent Citations Received

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US Patent 12119050 Variable delay word line enable

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US Patent 11250907 Variable delay word line enable

Patent Primary Examiner

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Connie C Yoha

Patent abstract

A memory device includes a bit line precharge circuit configured to precharge bit lines of a memory array in response to a clock pulse. A controller is configured to output the clock pulse to the bit line precharge circuit, and to output a first word line enable signal to a word line driver. The first word line enable signal is delayed by a first delay time from the clock pulse, and a second word line enable signal is delayed by a second delay time from the clock pulse.