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US Patent 10714385 Selective deposition of tungsten

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
June 6, 2017
Date of Patent
July 14, 2020
Patent Application Number
15615489
Patent Citations
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US Patent 10340125 Pulsed remote plasma method and system
0
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US Patent 10395917 Si precursors for deposition of SiN at low temperatures
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US Patent 10395919 Method and apparatus for filling a gap
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US Patent 10428419 Combination CVD/ALD method, source and pulse profile modification
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US Patent 10435790 Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
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US Patent 10468244 Precursors and flowable CVD methods for making low-K films to fill surface features
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US Patent 10483154 Front-end-of-line device structure and method of forming such a front-end-of-line device structure
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US Patent 10032628 Source/drain performance through conformal solid state doping
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US Patent 10018920 Lithography patterning with a gas phase resist
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US Patent 10023960 Process gas management for an inductively-coupled plasma deposition reactor
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•••
Patent Citations Received
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US Patent 11501965 Plasma enhanced deposition processes for controlled formation of metal oxide thin films
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US Patent 11377733 Fluorine-free tungsten deposition process employing in-situ oxidation and apparatuses for effecting the same
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US Patent 11918715 Polarized LED filtration system
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10714385
Patent Primary Examiner
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Brooke Kebede

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