US Patent 10573637 Carrier bypass for electrostatic discharge

Various aspects of the disclosure are directed to circuitry that may be used to shunt current. As may be consistent with one or more embodiments a first circuit has a plurality of alternating p-type and n-type semiconductor regions with respective p-n junctions therebetween, arranged between an anode end and a cathode end. A second (e.g., bypass) circuit is connected to one of the alternating p-type and n-type semiconductor regions, and forms a further p-n junction therewith. The second circuit operates to provide carrier flow, which influences operation of the first circuit.