Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 18, 2020
Patent Application Number
16052600
Date Filed
August 1, 2018
Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region; forming a first gate structure and a second gate structure on the first fin-shaped structure; using a patterned mask to remove the first gate structure and part of the first fin-shaped structure to form a first trench; and forming a first dielectric layer in the first trench to form a first single diffusion break (SDB) structure and around the second gate structure.
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