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US Patent 10566192 Transistor structure having buried island regions

Patent 10566192 was granted and assigned to Cambridge Electronics, Inc on February, 2020 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Cambridge Electronics, Inc
Cambridge Electronics, Inc
Date Filed
May 7, 2015
Date of Patent
February 18, 2020
Patent Applicant
Cambridge Electronics, Inc
Cambridge Electronics, Inc
Patent Application Number
14706350
Patent Citations Received
‌
US Patent 11355594 Diode
‌
US Patent 11349003 Transistor structure with a stress layer
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10566192
Patent Primary Examiner
‌
Tuan A Hoang

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