US Patent 10559939 Facet on a gallium and nitrogen containing laser diode
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Patent abstract
Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
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Patent Inventor Names
Alexander Sztein0
Ben Yonkee0
Hua Huang0
James W. Raring0
Phillip Skahan0
Qiyuan Wei0
Sang-Ho Oh0
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US Patent 10559939 Facet on a gallium and nitrogen containing laser diode
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Is a
Patent jurisdiction
Patent number
10559939
Date of patent
February 11, 2020
Patent application number
15937740
Date Filed
March 27, 2018
Patent primary examiner
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