US Patent 10411681 Semiconductor device and circuit protecting method

Patent 10411681 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2019 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Patent Applicant

Taiwan Semiconductor Manufacturing Company

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

10411681

Date of Patent

September 10, 2019

Patent Application Number

15863229

Date Filed

January 5, 2018

Patent Citations Received

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US Patent 11955478 Power semiconductor device with an auxiliary gate structure

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US Patent 11257811 Power semiconductor device with an auxiliary gate structure

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US Patent 11336279 Power semiconductor device with a series connection of two devices

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US Patent 11404565 Power semiconductor device with an auxiliary gate structure

Patent Primary Examiner

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Dinh T Le

Patent abstract

A device includes a first transistor having a first source terminal, a first drain terminal, and a first gate terminal; and a second transistor having a second source terminal, a second drain terminal, and a second gate terminal. The second source terminal is coupled to the first gate terminal and the first source terminal is coupled to the second gate terminal. The first transistor has a first threshold voltage, and the second transistor has a second threshold voltage different from the first threshold voltage.