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US Patent 10374148 Multi-resistance MRAM

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Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10374148
Date of Patent
August 6, 2019
Patent Application Number
15959837
Date Filed
April 23, 2018
Patent Citations
‌
US Patent 10192789 Methods of fabricating dual threshold voltage devices
Patent Citations Received
‌
US Patent 11386320 Magnetic domain wall-based non-volatile, linear and bi-directional synaptic weight element
‌
US Patent 11515472 Multi-resistance MRAM
Patent Primary Examiner
‌
Hien N Nguyen
Patent abstract

Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) for storing data may include a reference layer. A free layer of an MTJ may be separated from a reference layer by a barrier layer. A free layer may be configured such that one or more resistance states for an MTJ correspond to one or more positions of a magnetic domain wall within the free layer. A domain stabilization layer may be coupled to a portion of a free layer, and may be configured to prevent migration of a domain wall into the portion of the free layer.

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