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US Patent 10360962 Memory array with individually trimmable sense amplifiers

Patent 10360962 was granted and assigned to Spin Memory on July, 2019 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
1
Current Assignee
‌
Spin Memory
1
Date Filed
December 28, 2017
1
Date of Patent
July 23, 2019
1
Patent Applicant
Spin Transfer Technologies
Spin Transfer Technologies
1
Patent Application Number
15857296
1
Patent Citations
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US Patent 10043967 Self-compensation of stray field of perpendicular magnetic elements
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US Patent 10062837 Method of forming magnetic patterns, and method of manufacturing magnetic memory devices
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US Patent 10115446 Spin transfer torque MRAM device with error buffer
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US Patent 10134988 System for forming an electroactive layer
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US Patent 10163479 Method and apparatus for bipolar memory write-verify
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US Patent 10186614 Semiconductor device and manufacturing method thereof
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US Patent 10008662 Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
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US Patent 10026609 Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
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US Patent 10038137 MRAM device and method for fabricating the same
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US Patent 10042588 Electronic device and operating method thereof
•••
Patent Citations Received
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US Patent 10515697 Apparatuses and methods to control operations performed on resistive memory cells
Patent Inventor Names
Susmita Karmakar
1
Benjamin Louie
1
Mourad El Baraji
1
Neal Berger
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
10360962
1
Patent Primary Examiner
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Son L. Mai
1

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