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US Patent 10360962 Memory array with individually trimmable sense amplifiers

Patent 10360962 was granted and assigned to Spin Memory on July, 2019 by the United States Patent and Trademark Office.

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Applicant
Spin Transfer Technologies
Spin Transfer Technologies
1
Current Assignee
‌
Spin Memory
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
103609621
Patent Inventor Names
Susmita Karmakar1
Benjamin Louie1
Mourad El Baraji1
Neal Berger1
Date of Patent
July 23, 2019
1
Patent Application Number
158572961
Date Filed
December 28, 2017
1
Patent Citations
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US Patent 10043967 Self-compensation of stray field of perpendicular magnetic elements
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US Patent 10062837 Method of forming magnetic patterns, and method of manufacturing magnetic memory devices
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US Patent 10115446 Spin transfer torque MRAM device with error buffer
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US Patent 10134988 System for forming an electroactive layer
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US Patent 10163479 Method and apparatus for bipolar memory write-verify
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US Patent 10186614 Semiconductor device and manufacturing method thereof
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US Patent 10008662 Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
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US Patent 10026609 Nanoshape patterning techniques that allow high-speed and low-cost fabrication of nanoshape structures
...
Patent Citations Received
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US Patent 10515697 Apparatuses and methods to control operations performed on resistive memory cells
Patent Primary Examiner
‌
Son L. Mai
1
Patent abstract

A device includes an array of memory cells, input/output lines coupled to the memory cells, and sense amplifiers coupled to the input/output lines. Each sense amplifier is associated with a respective input/output line. The device also includes trim circuits. Each trim circuit is associated with and coupled to a respective sense amplifier. Each sense amplifier receives a respective reference voltage that allows the sense amplifier to sense a bit value of an addressed memory cell. Each trim circuit is operable for compensating for variations in the reference voltage used by the respective sense amplifier.

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