Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuming Zhang0
Renxu Jia0
Tiqiang Pang0
Yucheng Wang0
Lei Yuan0
Date of Patent
June 25, 2019
0Patent Application Number
161202440
Date Filed
September 1, 2018
0Patent Primary Examiner
Patent abstract
A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
