Patent attributes
Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a process chamber, a substrate support unit configured to support a substrate in the process chamber, a gas supply unit configured to supply a process gas into the process chamber, and an exhaust adjusting unit configured to adjust a discharge amount of the process gas and residual gases in the process chamber, wherein the exhaust adjusting unit includes a ring-shaped first exhaust ring provided on a side of the substrate support unit and having a plurality of exhaust holes, a ring-shaped second exhaust ring provided below the first exhaust ring and having a plurality of exhaust holes, and an adjustment part configured to adjust relative locations of the plurality of exhaust holes provided in the second exhaust ring with respect to the plurality of exhaust holes provided in the first exhaust ring.
