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US Patent 10305027 Magnetoresistive element and magnetic memory device

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Contents

Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10305027
Patent Inventor Names
Junichi Ito0
Tadaomi Daibou0
Yushi Kato0
Yuuzo Kamiguchi0
Hiroaki Sukegawa0
Kazuhiro Hono0
Mohamed Belmoubarik0
Naoharu Shimomura0
...
Date of Patent
May 28, 2019
Patent Application Number
15699749
Date Filed
September 8, 2017
Patent Citations Received
‌
US Patent 12136447 Tetragonal half metallic half-Heusler compounds
0
‌
US Patent 11563168 Magnetic memory device that suppresses diffusion of elements
‌
US Patent 11018293 Magnetoresistance effect element
Patent Primary Examiner
‌
William A Harriston
Patent abstract

According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

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