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US Patent 10211312 Ferroelectric memory device and fabrication method thereof

Patent 10211312 was granted and assigned to IMEC on February, 2019 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
IMEC
IMEC
Date Filed
August 5, 2016
Date of Patent
February 19, 2019
Patent Applicant
IMEC
IMEC
Patent Application Number
15230289
Patent Citations Received
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US Patent 12080329 Ferroelectric devices and ferroelectric memory cells
0
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US Patent 11915768 Memory circuit, system and method for rapid retrieval of data sets
0
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US Patent 12002523 Memory circuit, system and method for rapid retrieval of data sets
0
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US Patent 12073082 High capacity memory circuit with low effective latency
0
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US Patent 11839086 3-dimensional memory string array of thin-film ferroelectric transistors
0
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US Patent 11844204 Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10211312
Patent Primary Examiner
‌
Victor A Mandala

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