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US Patent 10176984 Selective deposition of silicon oxide

Patent 10176984 was granted and assigned to Lam Research on January, 2019 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Lam Research
Lam Research
Date Filed
February 14, 2017
Date of Patent
January 8, 2019
Patent Applicant
Lam Research
Lam Research
Patent Application Number
15432634
Patent Citations Received
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US Patent 11404275 Selective deposition using hydrolysis
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US Patent 10629429 Selective deposition of silicon oxide
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US Patent 10777407 Selective deposition of silicon nitride on silicon oxide using catalytic control
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US Patent 10825679 Selective growth of SIO2 on dielectric surfaces in the presence of copper
0
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US Patent 10903071 Selective deposition of silicon oxide
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US Patent 10998187 Selective deposition with atomic layer etch reset
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US Patent 10460930 Selective growth of SiO2 on dielectric surfaces in the presence of copper
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US Patent 10490413 Selective growth of silicon nitride
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US Patent 10559461 Selective deposition with atomic layer etch reset
Patent Inventor Names
Dennis M. Hausmann
0
David Charles Smith
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10176984
Patent Primary Examiner
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Julio J Maldonado

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