Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yun-Pu Ku0
Cheng-Chin Huang0
Chiao-Shun Chuang0
Date of Patent
January 1, 2019
0Patent Application Number
156734750
Date Filed
August 10, 2017
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A power MOSFET or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed with a two-step etching process as described in detail in the specification. The devices that embody this invention can be fabricated with higher packaging density and better and more tightly distributed device parameters such as the VF, RDSS, and BV.
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