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US Patent 10153020 Dual mode ferroelectric memory cell operation

Patent 10153020 was granted and assigned to Micron Technology on December, 2018 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Micron Technology
Micron Technology
Date Filed
June 9, 2017
Date of Patent
December 11, 2018
Patent Applicant
Micron Technology
Micron Technology
Patent Application Number
15618393
Patent Citations Received
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US Patent 11908506 Memory cell biasing techniques
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US Patent 10998026 Ferroelectric memory plate power reduction
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US Patent 11074955 Cell voltage accumulation discharge
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US Patent 11699475 Ferroelectric memory plate power reduction
0
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US Patent 11763860 Multi-port SDRAM
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US Patent 10622050 Ferroelectric memory plate power reduction
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US Patent 10636469 Cell voltage accumulation discharge
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US Patent 10867653 Access schemes for protecting stored data in a memory device
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US Patent 10964372 Memory cell biasing techniques
Patent Inventor Names
Daniele Vimercati
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10153020
Patent Primary Examiner
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Fernando Hidalgo

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