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US Patent 10103065 Gate metal patterning for tight pitch applications

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
April 25, 2017
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Date of Patent
October 16, 2018
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Patent Application Number
15496610
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Patent Citations Received
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US Patent 11393728 Semiconductor device and method of fabricating the same
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US Patent 11043495 Integrated circuit semiconductor device and method of manufacturing the same
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US Patent 11069580 Method of manufacturing a semiconductor device including a plurality of channel patterns
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US Patent 11257815 Work function design to increase density of nanosheet devices
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US Patent 11276576 Gate metal patterning to avoid gate stack attack due to excessive wet etching
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US Patent 11664656 ESD protection for integrated circuit devices
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US Patent 11749566 Inner filler layer for multi-patterned metal gate for nanostructure transistor
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US Patent 11368016 ESD protection for integrated circuit devices
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US Patent 10410933 Replacement metal gate patterning for nanosheet devices
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US Patent 10566248 Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar
•••
Patent Inventor Names
Joshua M. Rubin
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Alexander Reznicek
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Junli Wang
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Shogo Mochizuki
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10103065
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Patent Primary Examiner
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Marcos D. Pizarro-Crespo
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