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US Patent 10096622 Displays with silicon and semiconducting oxide thin-film transistors

Patent 10096622 was granted and assigned to Apple (company) on October, 2018 by the United States Patent and Trademark Office.

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent

Patent attributes

Patent Applicant
Apple (company)
Apple (company)
Current Assignee
Apple (company)
Apple (company)
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10096622
Date of Patent
October 9, 2018
Patent Application Number
15727475
Date Filed
October 6, 2017
Patent Citations Received
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US Patent 12108628 Display device
3
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US Patent 11875745 Display with light-emitting diodes
4
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US Patent 11985858 Display device
5
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US Patent 11462163 Display with light-emitting diodes
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US Patent 11232748 Display with light-emitting diodes
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US Patent 10672315 Array substrate, display panel, display apparatus and current measuring method
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US Patent 10707237 Displays with silicon and semiconducting oxide thin-film transistors
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US Patent 10714009 Display with light-emitting diodes
...
Patent Primary Examiner
‌
Wen-Ying P Chen
Patent abstract

An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

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