US Patent 10074422 2T1C ferro-electric random access memory cell
Patent 10074422 was granted and assigned to Cypress Semiconductor on September, 2018 by the United States Patent and Trademark Office.
Name
# Contributions
Last Contribution
Find more entities like US Patent 10074422 2T1C ferro-electric random access memory cell
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
By using this site, you agree to our Terms of Service.