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US Patent 10050193 Magnetoresistance structure patterning

Patent 10050193 was granted and assigned to Allegro Microsystems, Llc on August, 2018 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors

Is a

Current Assignee

Allegro Microsystems, Llc

Date Filed

June 5, 2017

Date of Patent

August 14, 2018

Patent Application Number

15613313

Patent Citations Received

US Patent 11852699 Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction

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US Patent 11630168 Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction

0

US Patent 11630169 Fabricating a coil above and below a magnetoresistance element

0

US Patent 11782105 Fabricating planarized coil layer in contact with magnetoresistance element

US Patent 10263179 Method of forming tunnel magnetoresistance (TMR) elements and TMR sensor element

US Patent 10566526 Patterning of a magnetoresistance structure including two hard masks

US Patent 11552243 MRAM structure with ternary weight storage

US Patent 10916438 Method of multiple gate oxide forming with hard mask

US Patent 11005036 Magnetoresistance structure including two hard masks

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

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