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US Patent 10002817 Semiconductor device

Patent 10002817 was granted and assigned to Hitachi Power Semiconductor Device, Ltd. on June, 2018 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Patent Applicant
Hitachi Power Semiconductor Device, Ltd.
Hitachi Power Semiconductor Device, Ltd.
Current Assignee
Hitachi Power Semiconductor Device, Ltd.
Hitachi Power Semiconductor Device, Ltd.
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10002817
Patent Inventor Names
Takayuki Kushima0
Osamu Ikeda0
Shinji Okubo0
Takaaki Miyazaki0
Date of Patent
June 19, 2018
Patent Application Number
15492604
Date Filed
April 20, 2017
Patent Primary Examiner
‌
Latanya N Crawford Eason
Patent abstract

A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate.

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