SBIR/STTR Award attributes
This proposed project combines advanced thin film materials engineering technology with state of the art photonic integrated circuit device concepts to develop next generation integrated electro-optic modulator devices. The proposed high speed thin film electro-optic modulator technology fills a critical need for compact, low voltage, and high analog bandwidth linear electro-optic modulators in silicon and InP photonic platforms. The proposed devices can meet this need by virtue of a large intrinsic electro-optic coefficient. With the proposed technology, it will be possible to achieve Vpi< 1V and electro-optic bandwidth > 60 GHz in a device that is on order of hundreds of microns in length. This device size makes the proposed technology ideal for high density multichannel integration with electronics and optoelectronic functions under programs such as AIM Photonics. Options for wafer scalability and foundry compatibility of the electro-optic material production and device fabrication processes will be assessed. Integration of the proposed technology with silicon and InP photonics could advance performance in high speed coherent optical communications networks, RF over fiber optical interconnects, and any application where very low drive voltage and high RF electro-optic bandwidth is required.
