SBIR/STTR Award attributes
There are three key technological innovations with this effort that are combined to make a MWIR FPA for the Air Force. Development of a patented open-circuit photodetector (VocP) circuit architecture: Unlike conventional detectors that operate in the reverse bias mode, the VocP uses an open circuit architecture that significantly improves sensitivity and dynamic range. SK Infrared worked with OSU to develop VocP intellectual property and the company has an exclusive license to practice as a means of maintaining a competitive advantage Engineering of Antimonide Interband Cascade Detectors (ICD): Using heterostructure engineering of antimonide semiconductors, we have demonstrated uncooled photonic MWIR detectors. These ICD detectors can be used to get a large open circuit voltage that will be combined with the VocP-ICD architecture. Monolithic epitaxial growth on large area silicon wafers: We are working with a commercial vendor, IQE Inc, who have recently demonstrated high quality crystal growth on 8-inch (200 mm) Si-wafer. By integrating the MWIR FPAs directly onto their digital Silicon circuits, we can eliminate processing complexity that plagues the incumbent MWIR FPA technology. We have estimated an epitaxial cost as low as $90/die from growth on 8-inch Si wafer, which is 10X less than the cost of an epitaxial die from any other incumbent MWIR photonic detector technology.
