SBIR/STTR Award attributes
This Phase II STTR proposes to develop high-quality high-performance infrared epitaxy materials based on strained layer superlattice absorber material and AlGaAsSb multiplication layer lattice matched to GaSb substrate for extended Long-Wave Infrared (LWIR) linear-mode avalanche photodiode (APD) applications such as improved target identification. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving low excess noise and high multiplication (>10) operation within LWIR band with spectral cutoff wavelength of 10.5 um and dark current density