SBIR/STTR Award attributes
This Phase I SBIR proposes to develop high-quality high-performance infrared epitaxy materials based on InGaAsSb absorber material and AlInAsSb multiplication layer lattice matched to GaSb substrate for extended Short-Wave Infrared (eSWIR) Geiger mode avalanche photodiode (GMAPD) applications such as laser ranging and detection. The epi materials will be grown with Sb-capable multi-wafer production Molecular Beam Epitaxy (MBE) reactor at IntelliEPI IR. The initial goal includes achieving low excess noise (k10) operation within SWIR band with spectral cutoff wavelength of ~2.039 um and dark current density