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INNOSYS, INC. STTR Phase I Award, December 2021

A STTR Phase I contract was awarded to INNOSYS, INC. in December, 2021 for $149,970.0 USD from the U.S. Department of Defense and Missile Defense Agency.

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sbir.gov/node/2232157
Is a
SBIR/STTR Awards
SBIR/STTR Awards

SBIR/STTR Award attributes

SBIR/STTR Award Recipient
INNOSYS, INC.
INNOSYS, INC.
0
Government Agency
U.S. Department of Defense
U.S. Department of Defense
0
Government Branch
Missile Defense Agency
Missile Defense Agency
0
Award Type
STTR0
Contract Number (US Government)
HQ0860-22-C-75020
Award Phase
Phase I0
Award Amount (USD)
149,9700
Date Awarded
December 6, 2021
0
End Date
June 5, 2022
0
Abstract

We will investigate the radiation effects on microelectronics due to gamma-rays and beta-rays and compare the effects on electrical and material properties between the two radiation types to formulate a quantitative mapping of radiation types (gamma and beta) and effects. The purpose is to: 1) Develop an overall physics-based strategy; 2) Define the experimental design, guided by analytical calculations, preliminary simulations, and the literature; 3) Measure gamma-ray effects in microelectronics; 4) Measure beta-ray (electron) effects in microelectronics; 5) Compare and develop a quantitative relationship between the dosimetric and radiation effects between gamma- and beta-ray radiation via guidance of electrical and material experimental result. Importantly, we will compare the radiation effects from this radiation such that future experimentation, simulation/modeling, and analyses can more confidently rely on the body of knowledge previously generated (primarily in gamma-ray fields). Phase I: Demonstrate and show feasibility of a methodology to develop test environments that will demonstrate survivability and extracting key metrics of this survivability using gamma- vs. beta-ray environments. We will consider whether existing methods of generating gamma and beta environments can be used, or whether innovative approaches are needed. Phase II: Implement the Phase I results in a prototype test design. Demonstrate the methodology by conducting an experimental study where the microelectronics are tested in partial and combined gamma- and/or beta-ray environments. Consider whether existing methods of generating, testing, and assessing microelectronics in gamma and beta environments can be used, or whether innovative approaches are needed. Phase III: Develop a quantitative comparison between gamma vs. beta environments. This will be based on Phase II experimental results, analysis of dose contributions to various components of the microelectronic architecture and resulting impacts on material and electrical properties. Here, the assessment of commercial/civil vs. military radiation hardness requirements apply. Approved for Public Release | 21-MDA-11013 (19 Nov 21)

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