Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type {the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes}
Devices sensitive to infra-red, visible or ultra-violet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type {the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes}