G11C 16/0408
Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS {comprising cells containing floating gate transistors }
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Edits on 16 Mar, 2022
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G11C 16/0408
Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS {comprising cells containing floating gate transistors }
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