US Patent 9905477 Inverters and manufacturing methods thereof
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Patent abstract
Inverters and methods of manufacture thereof are disclosed. In some embodiments, an inverter includes a substrate and a first tunnel FET (TFET) disposed over the substrate. The first TFET is a first fin field effect transistor (FinFET). A second TFET is over the first TFET. The second TFET is a second FinFET. A junction isolation region is disposed between a source of the first TFET and a source of the second TFET.
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Patent Inventor Names
Cheng-Yi Peng0
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Patent Citations Received
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US Patent 09905477 Inverters and manufacturing methods thereof US Patent 9905477 Inverters and manufacturing methods thereof
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Patent Number
099054770
Patent Number
99054770
Edits on 26 Apr, 2023
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Patent Jurisdiction
Patent Number
099054770
Date of Patent
February 27, 2018
0Patent Application Number
154130300
Date Filed
January 23, 2017
0Patent Primary Examiner
Edits on 19 Jan, 2022
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US Patent 09905477 Inverters and manufacturing methods thereof
Infobox
Is a
Patent jurisdiction
Patent number
09905477
Date of patent
February 27, 2018
Patent application number
15413030
Date Filed
January 23, 2017
Patent primary examiner
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