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US Patent 9401226 MRAM initialization devices and methods

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
94012261
Patent Inventor Names
Hyunsuk Shin1
Jung Pill Kim1
Sungryul Kim1
Date of Patent
July 26, 2016
1
Patent Application Number
148538601
Date Filed
September 14, 2015
1
Patent Citations Received
‌
US Patent 11907410 Method and device for managing storage system
2
Patent Primary Examiner
‌
Tan T. Nguyen
1
Patent abstract

A device includes a redundant region of a magnetoresistive random access memory (MRAM) array that includes first memory cells. The device includes a data region of the MRAM array that includes second memory cells. The device includes a fail address region of the MRAM array, a first row of the fail address region including validity data, wherein the validity data includes multiple validity indicators, a last row indicator, or both.

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