Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hyunsuk Shin1
Jung Pill Kim1
Sungryul Kim1
Date of Patent
July 26, 2016
1Patent Application Number
148538601
Date Filed
September 14, 2015
1Patent Citations Received
Patent Primary Examiner
Patent abstract
A device includes a redundant region of a magnetoresistive random access memory (MRAM) array that includes first memory cells. The device includes a data region of the MRAM array that includes second memory cells. The device includes a fail address region of the MRAM array, a first row of the fail address region including validity data, wherein the validity data includes multiple validity indicators, a last row indicator, or both.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.