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US Patent 9324899 Emitter diffusion conditions for black silicon

Patent 9324899 was granted and assigned to Natcore Technology on April, 2016 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
Natcore Technology
Natcore Technology
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
93248991
Patent Inventor Names
Richard W. Topel, Jr.1
Wendy G. Ahearn1
Theodore Zubil1
David Howard Levy1
Date of Patent
April 26, 2016
1
Patent Application Number
147342561
Date Filed
June 9, 2015
1
Patent Primary Examiner
‌
Jami M Valentine
1
Patent abstract

In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.

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