US Patent 8981382 Semiconductor structure including buffer with strain compensation layers

A semiconductor structure includes a substrate and a semiconductor buffer structure overlying the substrate. The semiconductor buffer structure includes a semiconductor body of a gallium nitride material, and a stack of strain compensation layers. The stack of strain compensation layers includes a layer of a first semiconductor material with an in-plane lattice constant that is smaller than a lattice constant of the semiconductor body, and a layer of a second semiconductor material with an in-plane lattice constant that is greater than the lattice constant of the semiconductor body.