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US Patent 8372201 High temperature ALD inlet manifold

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Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
83722011
Patent Inventor Names
Craig B. Hickson1
Timothy J. Provencher1
Date of Patent
February 12, 2013
1
Patent Application Number
130530141
Date Filed
March 21, 2011
1
Patent Citations Received
‌
US Patent 11830731 Semiconductor deposition reactor manifolds
2
Patent Primary Examiner
‌
Jeffrie R. Lund
1
Patent abstract

A system and method for distributing one or more gases to an atomic layer deposition (ALD) reactor. An integrated inlet manifold block mounted over a showerhead assembly includes high temperature (up to 200° C.) rated valves mounted directly thereto, and short, easily purged reactant lines. Integral passageways and metal seals avoid o-rings and attendant dead zones along flow paths. The manifold includes an internal inert gas channel for purging reactant lines within the block inlet manifold.

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