US Patent 7994862 Circuit and method of temperature dependent power amplifier biasing
Patent 7994862 was granted and assigned to SiGe Semiconductor on August, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.
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Patent Inventor Names
Anatoli Pukhovski0
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US Patent 07994862 Circuit and method of temperature dependent power amplifier biasing US Patent 7994862 Circuit and method of temperature dependent power amplifier biasing
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Patent Number
07994862
Patent Number
7994862
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US Patent 07994862 Circuit and method of temperature dependent power amplifier biasing
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Is a
Current assignee
Patent jurisdiction
Patent number
07994862
Date of patent
August 9, 2011
Patent application number
12704095
Date Filed
February 11, 2010
Patent primary examiner
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