Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Houng-Chi Wei0
Shih-Hsiang Lin0
Shi-Hsien Chen0
Hsin-Heng Wang0
Date of Patent
March 29, 2011
Patent Application Number
12468074
Date Filed
May 19, 2009
Patent Primary Examiner
Patent abstract
A junction-free NAND flash memory is described, including a substrate, memory cells, source/drain inducing (SDI) gates electrically connected with each other, and a dielectric material layer. The memory cells are disposed on the substrate, wherein each memory cell includes a charge storage layer. Each SDI gate is disposed between two neighboring memory cells. The dielectric material layer is disposed between the memory cells and the SDI gates and between the SDI gates and the substrate.
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