Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 4, 2011
Patent Application Number
12393048
Date Filed
February 26, 2009
Patent Primary Examiner
Patent abstract
A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.
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