US Patent 7807478 Nonvolatile memory device and fabrication method thereof
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Patent abstract
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device
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Patent Inventor Names
Tae Hoon Kim0
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US Patent 07807478 Nonvolatile memory device and fabrication method thereof US Patent 7807478 Nonvolatile memory device and fabrication method thereof
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Patent Number
078074780
Patent Number
78074780
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Patent Jurisdiction
Patent Number
078074780
Date of Patent
October 5, 2010
0Patent Application Number
126908310
Date Filed
January 20, 2010
0Official Website
Patent Primary Examiner
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US Patent 07807478 Nonvolatile memory device and fabrication method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07807478
Date of patent
October 5, 2010
Patent application number
12690831
Date Filed
January 20, 2010
Patent primary examiner
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