Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tae Hoon Kim1
Date of Patent
October 5, 2010
1Patent Application Number
126908311
Date Filed
January 20, 2010
1Patent Primary Examiner
Patent abstract
A nonvolatile memory device and its fabrication method of the present invention may ensure a margin of the threshold drive voltage during a design process of the device by forming a resistance layer determining phase of ReRAM along an upper edge of a lower electrode, and improve operating characteristics of the device
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