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US Patent 7795148 Method for removing damaged dielectric material

Patent 7795148 was granted and assigned to Tokyo Electron on September, 2010 by the United States Patent and Trademark Office.

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Patent
Patent
1

Patent attributes

Current Assignee
Tokyo Electron
Tokyo Electron
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
77951481
Patent Inventor Names
Ian J. Brown1
Date of Patent
September 14, 2010
1
Patent Application Number
113901931
Date Filed
March 28, 2006
1
Patent Primary Examiner
‌
Anita K Alanko
1
Patent abstract

A method for removing a damaged dielectric material following an etch process, an ashing process, or a wet cleaning process is described. A dry, non-plasma removal process is implemented to remove a thin layer of damaged material on a feature following formation of the feature. The dry, non-plasma removal process includes a chemical treatment of the damaged material, followed by a thermal treatment of the chemically treated surface layer. The two steps, chemical and thermal treatment, can be repeated.

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