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US Patent 7778082 Non-volatile memory device and programming method

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Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
77780821
Patent Inventor Names
Yoo-Cheol Shin1
Jung-Dal Choi1
Date of Patent
August 17, 2010
1
Patent Application Number
121866441
Date Filed
August 6, 2008
1
Patent Primary Examiner
‌
Michael T. Tran
1
Patent abstract

Provided are a non-volatile memory device and a programming method. The programming method includes applying a program voltage to a selected word line, applying an elevated pass voltage to word lines adjacent to the selected word line in a plurality of word lines, and applying a pass voltage to remaining word lines in the plurality of word lines.

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