US Patent 7754595 Method for manufacturing semiconductor device
Patent 7754595 was granted and assigned to Hitachi on July, 2010 by the United States Patent and Trademark Office.
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An insulating film on a semiconductor substrate has a first titanium nitride film, an aluminum film, and a second titanium nitride film formed thereon, and an insulating film is formed so as to cover a lower electrode wiring. Then, the insulating film is dry-etched anisotropically so that the insulating film on the lower electrode wiring is removed, and a portion of the insulating film on the lower electrode wiring is left as a sidewall. A deposit deposited during the etching of the insulating film on the lower electrode wiring is removed by radical etching without using ion bombardment. The deposit contains Ti that is a metal element forming the second titanium nitride film. Subsequently, the second titanium nitride film is nitrided through ammonium plasma, and an insulating film to cover the lower electrode wiring is formed.
US Patent 07754595 Method for manufacturing semiconductor device US Patent 7754595 Method for manufacturing semiconductor device
US Patent 07754595 Method for manufacturing semiconductor device
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