US Patent 7704857 Method of manufacturing semiconductor device
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Patent abstract
After a semiconductor element is formed and before resin sealing is performed, a surface of a scribe line between the adjacent semiconductor elements of a semiconductor wafer is scraped thinly. A laser is irradiated on a broken layer of the surface of the scribe line thus scraped thinly to recrystallize the broken layer.
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Patent Inventor Names
Daisuke Ito0
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US Patent 07704857 Method of manufacturing semiconductor device US Patent 7704857 Method of manufacturing semiconductor device
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Patent Number
077048570
Patent Number
77048570
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Patent Jurisdiction
Patent Number
077048570
Date of Patent
April 27, 2010
0Patent Application Number
123358610
Date Filed
December 16, 2008
0Official Website
Patent Primary Examiner
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US Patent 07704857 Method of manufacturing semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07704857
Date of patent
April 27, 2010
Patent application number
12335861
Date Filed
December 16, 2008
Patent primary examiner
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