Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoichi Sasaki1
Koichi Ohto1
Noboru Morita1
Tatsuya Usami1
Hidenobu Miyamoto1
Date of Patent
November 10, 2009
1Patent Application Number
116552611
Date Filed
January 19, 2007
1Patent Primary Examiner
Patent abstract
A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
